Recent publication in Advanced Materials:
We are pleased to share our latest publication in , "Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics"
https://doi.org/10.1002/adma.202512456Digital Object Identifier (DOI)
This is a comprehensive review on wide- and ultra-wide-bandgap semiconducting oxide nanostructures and their growing relevance for next-generation photonics. Beyond consolidating recent advances, this work puts forward a strategic perspective: the future of semiconductor technologies will not rely on a single material platform, but on the intelligent integration of emerging materials that enable new functionalities at the photonics–quantum interface. Building on recent work from our group, and the broader community, the article explores how wide-bandgap oxides offer unique opportunities through defect engineering, nanostructuring, and light–matter coupling, positioning them as promising platforms for quantum photonics, single-photon sources, quantum sensing, and hybrid quantum–classical systems. Importantly, these directions are closely aligned with current European and international roadmaps, including the EU Chips Act, Quantum Flagship, and deep-tech innovation strategies, where advanced materials, scalable platforms, and cross-disciplinary integration are recognized as critical enablers of technological sovereignty and long-term impact.
FINE Group history
Research group: Physics of Electronic Nanomaterials / Física de Nanomateriales Electrónicos (FINE)
Our interest is focused on optoelectronic materials and devices based on semiconducting oxide nanomaterials, going from the study of their fundamental physics properties and advanced characterization up to the exploration of their implementation in advanced optoelectronics, photonics, sensors, energy and quantum devices. Currently, our main materials' platform is wide and ultra-wide bandgap oxides, which exhibit intriguing physical properties.
The FINE Group was founded by Javier Piqueras (Professor Emeritus) in 1986. In its beginnings, the research work was focused on semiconductors materials characterization by techniques associated with scanning electron microscopy (SEM) as cathodoluminescence (CL) techniques, electron beam induced current (EBIC) and electroacoustic scanning microscopy, which have been implemented in our group. Later on, the characterization techniques have been widened with the incorporation of near field microscopy techniques (scanning tunneling microscopy (STM) and atomic force microscopy (AFM)), optical spectroscopy and confocal microscopy techniques.