R. J. Hicken, University of Exeter,
U.K.
J.C. Slonczewski, IBM Research Division, NY, USA
J.M.D. Coey, Trinity College, Ireland
R. Schaefer, IFW Dresden, Germany
I.K. Schuller, University of California, San Diego, USA
H. Brune, Institut de Pysique des Nanostructures, EPFL, Switzerland
A. F. Hebard, University of Florida, USA
D. Newman, Coventry University, U.K.
A. Huetten, University of Bielefeld, Germany
E. Marinero, IBM Almaden Research Center, San Jose, USA
Bryan L. Gallagher, University of Nottingham, U.K.
J.J. de Miguel, Universidad Autónoma de Madrid, Spain
Masakiyo Tsunoda, Tohoku University, Japan
Claude Chappert, Institut d'Electronique Fondamentale, France
Agnès Barthélémy, UMR de Physique
CNRS-Thales-Université Paris-Sud, France E. Dan Dahlberg, University of Minnesota, USA A. Thiaville, Lab. Physique des Solides, Paris-Sud University &
CNRS, France C. Fermon, DRECAM/SPEC CEA Sacalay, France M.Kisielewski, Institute of Experimental Physics, University of
Bialystok, Poland R.W.
Chantrell, Seagate Research, USA